ONSEMI RHRG75120 75A, 1200V Hyperfast Diode Multilayer IR Technologies

IR Technologies

This bridge rectifier are typically used in large UPS systems

Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors

a gate voltage of 10V

These are Metal Film Resistor with a value of 20k ohm 1/4W and tolerance of ±1%

ONSEMI RHRG75120 75A, 1200V Hyperfast Diode Multilayer IR TechnologiesThe RHRG75120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ion implanted epitaxial planar construction. These devices are intended to be used as freewheeling clamping diodes and diodes in a variety of switching power supplies and other power switching Applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in